1Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K256M4 – 32 Meg x 4 x 8 banks
MT41K128M8 – 16 Meg x 8 x 8 banks
MT41K64M16 – 8 Meg x 16 x 8 banks
• Write leveling
• Multipurpose register
• Output driver calibration
Description
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.
Options1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Marking
• Configuration
– 256 Meg x 4
– 128 Meg x 8
– 64 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball FBGA (8mm x 11.5mm) Rev.
G
– 78-ball FBGA (8mm x 10.5mm) Rev. J
• FBGA package (Pb-free) – x16
– 96-ball FBGA (8mm x 14mm) Rev. G
– 96-ball FBGA (8mm x 14mm) Rev. J
• Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C ≤ T C ≤ +95°C)
– Industrial (–40°C ≤ T C ≤ +95°C)
• Revision
VDD = V DDQ = +1.35V (1.283V to 1.45V)
Backward compatible to V DD = V DDQ = 1.5V ±0.075V
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
TC of 0°C to 95°C
– 64ms, 8192-cycle refresh at 0°C to 85°C
– 32ms at 85°C to 95°C
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Note:
256M4
128M8
64M16
JP
DA
JT
TW
-107
-125
-15E
-187E
None
IT
:G / :J
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
-1071, 2, 3
1866
13-13-13
13.91
13.91
13.91
-1251, 2
1600
11-11-11
13.75
13.75
13.75
-15E1
1333
9-9-9
13.5
13.5
13.5
187E
1066
7-7-7
13.1
13.1
13.1
Notes:
tRCD
(ns)
tRP
(ns)
CL (ns)
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 2: Addressing
Parameter
256 Meg x 4
128 Meg x 8
64 Meg x 16
Configuration
32 Meg x 4 x 8 banks
16 Meg x 8 x 8 banks
8 Meg x 16 x 8 banks
Refresh count
8K
8K
8K
16K A[13:0]
16K A[13:0]
8K A[12:0]
Row address
Bank address
Column address
Page Size
8 BA[2:0]
8 BA[2:0]
8 BA[2:0]
2K A[11, 9:0]
1K A[9:0]
1K A[9:0]
1KB
1KB
2KB
Figure 1: DDR3 Part Numbers
Example Part Number: MT41K256M4DA-125:J
Configuration
Package
Speed
Revision
{
MT41K
:
:G / :J Revision
Temperature
Configuration
256 Meg x 4
256M4
Commercial
128 Meg x 8
128M8
Industrial temperature
64 Meg x 16
64M16
78-ball 8mm x 11.5mm FBGA
G
JP
-107
Speed Grade
tCK = 1.07ns, CL = 13
96-ball 8mm x 14mm FBGA
G
JT
-125
tCK = 1.25ns, CL = 11
78-ball 8mm x 10.5mm FBGA
J
DA
-15E
tCK = 1.5ns, CL = 9
96-ball 8mm x 14mm FBGA
J
TW
-187E
tCK = 1.87ns, CL = 7
Package
Note:
Rev.
Mark
None
IT
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Contents
State Diagram ................................................................................................................................................ 11
Functional Description ................................................................................................................................... 12
Industrial Temperature ............................................................................................................................... 12
General Notes ............................................................................................................................................ 12
Functional Block Diagrams ............................................................................................................................. 14
Ball Assignments and Descriptions ................................................................................................................. 16
Package Dimensions ....................................................................................................................................... 22
Electrical Specifications .................................................................................................................................. 26
Absolute Ratings ......................................................................................................................................... 26
Input/Output Capacitance .......................................................................................................................... 27
Thermal Characteristics .................................................................................................................................. 28
Electrical Specifications – IDD Specifications and Conditions ............................................................................ 29
Electrical Characteristics – IDD Specifications .................................................................................................. 40
Electrical Specifications – DC and AC .............................................................................................................. 44
DC Operating Conditions ........................................................................................................................... 44
Input Operating Conditions ........................................................................................................................ 45
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 49
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 52
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 54
ODT Characteristics ....................................................................................................................................... 55
1.35V ODT Resistors ................................................................................................................................... 56
ODT Sensitivity .......................................................................................................................................... 57
ODT Timing Definitions ............................................................................................................................. 57
Output Driver Impedance ............................................................................................................................... 61
34 Ohm Output Driver Impedance .............................................................................................................. 62
DDR3L 34 Ohm Driver ................................................................................................................................ 63
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 64
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 65
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 65
Output Characteristics and Operating Conditions ............................................................................................ 67
Reference Output Load ............................................................................................................................... 70
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 70
Slew Rate Definitions for Differential Output Signals .................................................................................... 72
Speed Bin Tables ............................................................................................................................................ 73
Electrical Characteristics and AC Operating Conditions ................................................................................... 77
Command and Address Setup, Hold, and Derating ........................................................................................... 95
Data Setup, Hold, and Derating ...................................................................................................................... 102
Commands – Truth Tables ............................................................................................................................. 110
Commands ................................................................................................................................................... 113
DESELECT ................................................................................................................................................ 113
NO OPERATION ........................................................................................................................................ 113
ZQ CALIBRATION LONG ........................................................................................................................... 113
ZQ CALIBRATION SHORT .......................................................................................................................... 113
ACTIVATE ................................................................................................................................................. 113
READ ........................................................................................................................................................ 113
WRITE ...................................................................................................................................................... 114
PRECHARGE ............................................................................................................................................. 115
REFRESH .................................................................................................................................................. 115
SELF REFRESH .......................................................................................................................................... 116
DLL Disable Mode ..................................................................................................................................... 117
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Input Clock Frequency Change ...................................................................................................................... 121
Write Leveling ............................................................................................................................................... 123
Write Leveling Procedure ........................................................................................................................... 125
Write Leveling Mode Exit Procedure ........................................................................................................... 127
Initialization ................................................................................................................................................. 128
Voltage Initialization / Change ....................................................................................................................... 130
VDD Voltage Switching ............................................................................................................................... 131
Mode Registers .............................................................................................................................................. 132
Mode Register 0 (MR0) ................................................................................................................................... 133
Burst Length ............................................................................................................................................. 133
Burst Type ................................................................................................................................................. 134
DLL RESET ................................................................................................................................................ 135
Write Recovery .......................................................................................................................................... 135
Precharge Power-Down (Precharge PD) ...................................................................................................... 136
CAS Latency (CL) ....................................................................................................................................... 136
Mode Register 1 (MR1) ................................................................................................................................... 137
DLL Enable/DLL Disable ........................................................................................................................... 137
Output Drive Strength ............................................................................................................................... 138
OUTPUT ENABLE/DISABLE ...................................................................................................................... 138
TDQS Enable ............................................................................................................................................. 138
On-Die Termination .................................................................................................................................. 139
WRITE LEVELING ..................................................................................................................................... 139
POSTED CAS ADDITIVE Latency ................................................................................................................ 139
Mode Register 2 (MR2) ................................................................................................................................... 140
CAS WRITE Latency (CWL) ........................................................................................................................ 141
AUTO SELF REFRESH (ASR) ....................................................................................................................... 141
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 142
SRT vs. ASR ............................................................................................................................................... 142
DYNAMIC ODT ......................................................................................................................................... 142
Mode Register 3 (MR3) ................................................................................................................................... 143
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 143
MPR Functional Description ...................................................................................................................... 144
MPR Register Address Definitions and Bursting Order ................................................................................. 145
MPR Read Predefined Pattern .................................................................................................................... 151
MODE REGISTER SET (MRS) Command ........................................................................................................ 151
ZQ CALIBRATION Operation ......................................................................................................................... 152
ACTIVATE Operation ..................................................................................................................................... 153
READ Operation ............................................................................................................................................ 155
WRITE Operation .......................................................................................................................................... 166
DQ Input Timing ....................................................................................................................................... 174
PRECHARGE Operation ................................................................................................................................. 176
SELF REFRESH Operation .............................................................................................................................. 176
Extended Temperature Usage ........................................................................................................................ 178
Power-Down Mode ........................................................................................................................................ 179
RESET Operation ........................................................................................................................................... 187
On-Die Termination (ODT) ............................................................................................................................ 189
Functional Representation of ODT ............................................................................................................. 189
Nominal ODT ............................................................................................................................................ 189
Dynamic ODT ............................................................................................................................................... 191
Dynamic ODT Special Use Case ................................................................................................................. 191
Functional Description .............................................................................................................................. 191
Synchronous ODT Mode ................................................................................................................................ 197
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
ODT Latency and Posted ODT .................................................................................................................... 197
Timing Parameters .................................................................................................................................... 197
ODT Off During READs .............................................................................................................................. 200
Asynchronous ODT Mode .............................................................................................................................. 202
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 204
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 206
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 208
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
List of Figures
Figure 1: DDR3 Part Numbers .......................................................................................................................... 2
Figure 2: Simplified State Diagram ................................................................................................................. 11
Figure 3: 256 Meg x 4 Functional Block Diagram ............................................................................................. 14
Figure 4: 128 Meg x 8 Functional Block Diagram ............................................................................................. 15
Figure 5: 64 Meg x 16 Functional Block Diagram ............................................................................................. 15
Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 16
Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View) ............................................................................... 17
Figure 8: 78-Ball FBGA – x4, x8 (JP) ................................................................................................................ 22
Figure 9: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 23
Figure 10: 96-Ball FBGA – x16 (JT) .................................................................................................................. 24
Figure 11: 96-Ball FBGA – x16 (TW) ................................................................................................................ 25
Figure 12: Thermal Measurement Point ......................................................................................................... 28
Figure 13: DDR3L 1.35V Input Signal .............................................................................................................. 48
Figure 14: Overshoot ..................................................................................................................................... 49
Figure 15: Undershoot ................................................................................................................................... 49
Figure 16: V IX for Differential Signals .............................................................................................................. 50
Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 50
Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 51
Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 53
Figure 20: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 54
Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 55
Figure 22: ODT Timing Reference Load .......................................................................................................... 58
Figure 23: tAON and tAOF Definitions ............................................................................................................ 59
Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 59
Figure 25: tADC Definition ............................................................................................................................. 60
Figure 26: Output Driver ................................................................................................................................ 61
Figure 27: DQ Output Signal .......................................................................................................................... 68
Figure 28: Differential Output Signal .............................................................................................................. 69
Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 70
Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 71
Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 72
Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) .............................................. 98
Figure 33: Nominal Slew Rate for tIH (Command and Address – Clock) ............................................................ 99
Figure 34: Tangent Line for tIS (Command and Address – Clock) .................................................................... 100
Figure 35: Tangent Line for tIH (Command and Address – Clock) .................................................................... 101
Figure 36: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 106
Figure 37: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 107
Figure 38: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 108
Figure 39: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 109
Figure 40: Refresh Mode ............................................................................................................................... 116
Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 118
Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 119
Figure 43: DLL Disable tDQSCK .................................................................................................................... 120
Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 122
Figure 45: Write Leveling Concept ................................................................................................................. 123
Figure 46: Write Leveling Sequence ............................................................................................................... 126
Figure 47: Write Leveling Exit Procedure ....................................................................................................... 127
Figure 48: Initialization Sequence ................................................................................................................. 129
Figure 49: V DD Voltage Switching .................................................................................................................. 131
Figure 50: MRS to MRS Command Timing ( tMRD) ......................................................................................... 132
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Figure 51: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 133
Figure 52: Mode Register 0 (MR0) Definitions ................................................................................................ 134
Figure 53: READ Latency .............................................................................................................................. 136
Figure 54: Mode Register 1 (MR1) Definition ................................................................................................. 137
Figure 55: READ Latency (AL = 5, CL = 6) ....................................................................................................... 140
Figure 56: Mode Register 2 (MR2) Definition ................................................................................................. 141
Figure 57: CAS WRITE Latency ...................................................................................................................... 141
Figure 58: Mode Register 3 (MR3) Definition ................................................................................................. 143
Figure 59: Multipurpose Register (MPR) Block Diagram ................................................................................. 144
Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 147
Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 148
Figure 62: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 149
Figure 63: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 150
Figure 64: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 152
Figure 65: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 153
Figure 66: Example: tFAW ............................................................................................................................. 154
Figure 67: READ Latency .............................................................................................................................. 155
Figure 68: Consecutive READ Bursts (BL8) .................................................................................................... 157
Figure 69: Consecutive READ Bursts (BC4) .................................................................................................... 157
Figure 70: Nonconsecutive READ Bursts ....................................................................................................... 158
Figure 71: READ (BL8) to WRITE (BL8) .......................................................................................................... 158
Figure 72: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 159
Figure 73: READ to PRECHARGE (BL8) .......................................................................................................... 159
Figure 74: READ to PRECHARGE (BC4) ......................................................................................................... 160
Figure 75: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 160
Figure 76: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 160
Figure 77: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 162
Figure 78: Data Strobe Timing – READs ......................................................................................................... 163
Figure 79: Method for Calculating tLZ and tHZ ............................................................................................... 164
Figure 80: tRPRE Timing ............................................................................................................................... 164
Figure 81: tRPST Timing ............................................................................................................................... 165
Figure 82: tWPRE Timing .............................................................................................................................. 167
Figure 83: tWPST Timing .............................................................................................................................. 167
Figure 84: WRITE Burst ................................................................................................................................ 168
Figure 85: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 169
Figure 86: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 169
Figure 87: Nonconsecutive WRITE to WRITE ................................................................................................. 170
Figure 88: WRITE (BL8) to READ (BL8) .......................................................................................................... 170
Figure 89: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 171
Figure 90: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 172
Figure 91: WRITE (BL8) to PRECHARGE ........................................................................................................ 173
Figure 92: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 173
Figure 93: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 174
Figure 94: Data Input Timing ........................................................................................................................ 175
Figure 95: Self Refresh Entry/Exit Timing ...................................................................................................... 177
Figure 96: Active Power-Down Entry and Exit ................................................................................................ 181
Figure 97: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 181
Figure 98: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 182
Figure 99: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 182
Figure 100: Power-Down Entry After WRITE .................................................................................................. 183
Figure 101: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 183
Figure 102: REFRESH to Power-Down Entry .................................................................................................. 184
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Figure 103:
Figure 104:
Figure 105:
Figure 106:
Figure 107:
Figure 108:
Figure 109:
Figure 110:
Figure 111:
Figure 112:
Figure 113:
Figure 114:
Figure 115:
Figure 116:
Figure 117:
Figure 118:
Figure 119:
Figure 120:
Figure 121:
ACTIVATE to Power-Down Entry ................................................................................................. 184
PRECHARGE to Power-Down Entry ............................................................................................. 185
MRS Command to Power-Down Entry ......................................................................................... 185
Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 186
RESET Sequence ......................................................................................................................... 188
On-Die Termination ................................................................................................................... 189
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 194
Dynamic ODT: Without WRITE Command .................................................................................. 194
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 195
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 196
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 196
Synchronous ODT ...................................................................................................................... 198
Synchronous ODT (BC4) ............................................................................................................. 199
ODT During READs .................................................................................................................... 201
Asynchronous ODT Timing with Fast ODT Transition .................................................................. 203
Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 205
Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 207
Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 209
Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 209
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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1Gb: x4, x8, x16 DDR3L SDRAM
Description
List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 18
Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 20
Table 5: Absolute Maximum Ratings .............................................................................................................. 26
Table 6: DDR3L Input/Output Capacitance .................................................................................................... 27
Table 7: Thermal Characteristics .................................................................................................................... 28
Table 8: DDR3L Timing Parameters Used for I DD Measurements – Clock Units ................................................. 29
Table 9: DDR3L IDD0 Measurement Loop ........................................................................................................ 30
Table 10: DDR3L IDD1 Measurement Loop ...................................................................................................... 31
Table 11: DDR3L IDD Measurement Conditions for Power-Down Currents ....................................................... 32
Table 12: DDR3L IDD2N and IDD3N Measurement Loop .................................................................................... 33
Table 13: DDR3L IDD2NT Measurement Loop .................................................................................................. 33
Table 14: DDR3L IDD4R Measurement Loop .................................................................................................... 34
Table 15: DDR3L IDD4W Measurement Loop .................................................................................................... 35
Table 16: DDR3L IDD5B Measurement Loop .................................................................................................... 36
Table 17: DDR3L IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 ........................................................ 37
Table 18: DDR3L IDD7 Measurement Loop ...................................................................................................... 38
Table 19: IDD Maximum Limits – Rev. G .......................................................................................................... 40
Table 20: IDD Maximum Limits – Rev. J ........................................................................................................... 42
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 44
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 45
Table 23: DDR3L 1.35V Input Switching Conditions - Command and Address .................................................. 46
Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 47
Table 25: DDR3L Control and Address Pins ..................................................................................................... 49
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 49
Table 27: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ...
51
Table 28: Single-Ended Input Slew Rate Definition .......................................................................................... 52
Table 29: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 54
Table 30: On-Die Termination DC Electrical Characteristics ............................................................................ 55
Table 31: 1.35V RTT Effective Impedance ........................................................................................................ 56
Table 32: ODT Sensitivity Definition .............................................................................................................. 57
Table 33: ODT Temperature and Voltage Sensitivity ........................................................................................ 57
Table 34: ODT Timing Definitions .................................................................................................................. 58
Table 35: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 58
Table 36: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 62
Table 37: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 63
Table 38: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 63
Table 39: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 63
Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 64
Table 41: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 64
Table 42: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 64
Table 43: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 65
Table 44: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 65
Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 66
Table 46: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 67
Table 47: DDR3L Differential Output Driver Characteristics ............................................................................ 68
Table 48: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 69
Table 49: Single-Ended Output Slew Rate Definition ....................................................................................... 70
Table 50: Differential Output Slew Rate Definition .......................................................................................... 72
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 51:
Table 52:
Table 53:
Table 54:
Table 55:
Table 56:
Table 57:
Table 58:
Table 59:
Table 60:
Table 61:
Table 62:
Table 63:
Table 64:
Table 65:
Table 66:
Table 67:
Table 68:
Table 69:
Table 70:
Table 71:
Table 72:
Table 73:
Table 74:
Table 75:
Table 76:
Table 77:
Table 78:
Table 79:
Table 80:
Table 81:
Table 82:
Table 83:
Table 84:
Table 85:
Table 86:
Table 87:
Table 88:
Table 89:
DDR3L-1066 Speed Bins .................................................................................................................. 73
DDR3L-1333 Speed Bins .................................................................................................................. 74
DDR3L-1600 Speed Bins .................................................................................................................. 75
DDR3L-1866 Speed Bins .................................................................................................................. 76
Electrical Characteristics and AC Operating Conditions .................................................................... 77
Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 87
DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ................ 96
DDR3L-800/1066/1333/1600 Derating Values tIS/tIH – AC160/DC90-Based ...................................... 96
DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................. 96
DDR3L-1866 Derating Values for tIS/tIH – AC125/DC90-Based ......................................................... 97
DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition .. 97
DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 103
DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 103
DDR3L Derating Values for tDS/tDH – AC135/DC100-Based ............................................................ 103
DDR3L Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................... 104
DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 105
Truth Table – Command ................................................................................................................. 110
Truth Table – CKE .......................................................................................................................... 112
READ Command Summary ............................................................................................................ 114
WRITE Command Summary .......................................................................................................... 114
READ Electrical Characteristics, DLL Disable Mode ......................................................................... 120
Write Leveling Matrix ..................................................................................................................... 124
Burst Order .................................................................................................................................... 135
MPR Functional Description of MR3 Bits ........................................................................................ 144
MPR Readouts and Burst Order Bit Mapping ................................................................................... 145
Self Refresh Temperature and Auto Self Refresh Description ............................................................ 178
Self Refresh Mode Summary ........................................................................................................... 178
Command to Power-Down Entry Parameters .................................................................................. 179
Power-Down Modes ....................................................................................................................... 180
Truth Table – ODT (Nominal) ......................................................................................................... 190
ODT Parameters ............................................................................................................................ 190
Write Leveling with Dynamic ODT Special Case .............................................................................. 191
Dynamic ODT Specific Parameters ................................................................................................. 192
Mode Registers for RTT,nom ............................................................................................................. 192
Mode Registers for RTT(WR) ............................................................................................................. 193
Timing Diagrams for Dynamic ODT ................................................................................................ 193
Synchronous ODT Parameters ........................................................................................................ 198
Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 203
ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 205
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1Gb: x4, x8, x16 DDR3L SDRAM
State Diagram
State Diagram
Figure 2: Simplified State Diagram
CKE L
Power
applied
Power
on
MRS, MPR,
write
leveling
Initialization
Reset
procedure
Self
refresh
SRE
ZQCL
From any
state
RESET
ZQ
calibration
MRS
SRX
REF
ZQCL/ZQCS
Refreshing
Idle
PDE
ACT
PDX
Active
powerdown
Precharge
powerdown
Activating
PDX
CKE L
CKE L
PDE
Bank
active
WRITE
WRITE
READ
WRITE AP
Writing
READ
READ AP
READ
WRITE
WRITE AP
Reading
READ AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Reading
Precharging
Automatic
sequence
Command
sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
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1Gb_DDR3L.pdf - Rev. K EN 9/14
PREA = PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
11
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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1Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds
85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T C is < 0°C or
>95°C.
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
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1Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
• Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation.
• Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
–
–
–
–
Connect UDQS to ground via 1kΩ* resistor.
Connect UDQS# to V DD via 1kΩ* resistor.
Connect UDM to V DD via 1kΩ* resistor.
Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float
DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.
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1Gb_DDR3L.pdf - Rev. K EN 9/14
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1Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.
Figure 3: 256 Meg x 4 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQCL, ZQCS
CKE
VSSQ
To pull-up/pull-down
networks
ZQ CAL
RESET#
Control
logic
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
16
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
14
14
Bank 0
rowaddress
latch
and
decoder
16,384
RTT(WR)
CK, CK#
sw2
sw1
DLL
(1 . . . 4)
14
Rowaddress
MUX
RTT,nom
Columns 0, 1, and 2
Bank 0
memory
array
(16,384 x 256 x 32)
32
READ
FIFO
and
data
MUX
4
DQ[3:0]
READ
drivers
DQ[3:0]
DQS, DQS#
VDDQ/2
Sense amplifiers
32
BC4
RTT,nom
8,192
BC4
OTF
I/O gating
DM mask logic
3
A[13:0]
BA[2:0]
17
Address
register
3
sw1
(1, 2)
Bank
control
logic
Columnaddress
counter/
latch
DQS, DQS#
VDDQ/2
32
Data
interface
Column
decoder
4
Data
WRITE
drivers
and
input
logic
8
RTT,nom
sw1
RTT(WR)
sw2
DM
3
Columns 0, 1, and 2
CK, CK#
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
sw2
DM
256
(x32)
11
RTT(WR)
14
Column 2
(select upper or
lower nibble for BC4)
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1Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
Figure 4: 128 Meg x 8 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQ CAL
RESET#
ZQCL, ZQCS
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
16
14
14
Bank 0
rowaddress
16,384
latch
and
decoder
RTT(WR)
CK, CK#
sw2
sw1
DLL
(1 . . . 8)
14
Rowaddress
MUX
RTT,nom
Columns 0, 1, and 2
Bank 0
memory
array
(16,384 x 128 x 64)
64
DQ8
READ
FIFO
and
data
MUX
8
TDQS#
DQ[7:0]
READ
drivers
DQ[7:0]
DQS, DQS#
VDDQ/2
Sense amplifiers
64
BC4
8,192
17
Address
register
RTT(WR)
sw2
sw1
I/O gating
DM mask logic
3
A[13:0]
BA[2:0]
BC4
OTF
RTT,nom
(1, 2)
Bank
control
logic
3
VDDQ/2
(128
x64)
64
Data
interface
Column
decoder
Columnaddress
counter/
latch
10
DQS, DQS#
8
Data
WRITE
drivers
and
input
logic
RTT,nom
RTT(WR)
sw2
sw1
7
DM/TDQS
(shared pin)
3
Columns 0, 1, and 2
CK, CK#
Column 2
(select upper or
lower nibble for BC4)
Figure 5: 64 Meg x 16 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQ CAL
RESET#
ZQCL, ZQCS
A12
VDDQ/2
CK, CK#
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
16
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
13
13
Bank 0
rowaddress
latch
and
decoder
8,192
DLL
(1 . . . 16)
Bank 0
memory
array
(8192 x 128 x 128)
128
READ
FIFO
and
data
MUX
16
DQ[15:0]
READ
drivers
LDQS, LDQS#, UDQS, UDQS#
Address
register
3
sw2
LDQS, LDQS#
Bank
control
logic
(1 . . . 4)
Columnaddress
counter/
latch
UDQS, UDQS#
VDDQ/2
128
Data
interface
Column
decoder
16
Data
WRITE
drivers
and
input
logic
RTT,nom
sw1
RTT(WR)
sw2
7
(1, 2)
LDM/UDM
3
Columns 0, 1, and 2
CK, CK#
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
RTT(WR)
I/O gating
DM mask logic
(128
x128)
10
RTT,nom
sw1
BC4
OTF
3
DQ[15:0]
VDDQ/2
BC4
128
16,384
16
sw2
sw1
Sense amplifiers
A[12:0]
BA[2:0]
RTT(WR)
CK, CK#
13
Rowaddress
MUX
RTT,nom
Column 0, 1, and 2
15
Column 2
(select upper or
lower nibble for BC4)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Ball Assignments and Descriptions
Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View)
1
2
3
VSS
VDD
VSS
VDDQ
4
5
6
7
8
9
NC
NF, NF/TDQS#
VSS
VDD
VSSQ
DQ0
DM, DM/TDQS
VSSQ
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
NF, DQ6 DQS#
VDD
VSS
VSSQ
A
B
C
D
VSSQ
E
VREFDQ
NF, DQ7 NF, DQ5 VDDQ
VDDQ NF, DQ4
F
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
NC
A8
VSS
G
H
J
K
L
M
N
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. Ball descriptions listed in Table 3 (page 18) are listed as x4, x8 if unique; otherwise, x4
and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3).
16
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1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View)
1
2
3
VDDQ
DQ13
VSSQ
4
5
6
7
8
9
DQ15
DQ12
VDDQ
VSS
VDD
VSS
UDQS#
DQ14
VSSQ
VDDQ
DQ11
DQ9
UDQS
DQ10
VDDQ
VSSQ
VDDQ
UDM
DQ8
VSSQ
VDD
VSS
VSSQ
DQ0
LDM
VSSQ
VDDQ
VDDQ
DQ2
LDQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
LDQS#
VDD
VSS
VSSQ
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
NC
NC
A8
VSS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. Ball descriptions listed in Table 3 (page 18) are listed as x16.
2. A comma separates the configuration; a slash defines a selectable function.
17
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol
Type
Description
A[9:0], A10/AP,
A11, A12/BC#,
A13
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out
of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: when enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop).
BA[2:0]
Input
Bank address inputs: BA[2:0] define to which bank an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to VREFCA.
DM
Input
Input data mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with the input data during a write access. Although the DM
ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM
is referenced to VREFDQ. DM has an optional use as TDQS on the x8 device.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the
x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the
LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver
is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC LOW ≤
0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous.
DQ[3:0]
I/O
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ.
18
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)
Symbol
Type
DQ[7:0]
I/O
Description
Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ.
DQS, DQS#
I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data.
TDQS, TDQS#
I/O
Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled,
DM is disabled, and the TDQS and TDQS# balls provide termination resistance.
VDD
Supply
Power supply: 1.35V, 1.283V to 1.45V operational; compatible with 1.5V operation.
VDDQ
Supply
DQ power supply: 1.35V, 1.283V to 1.45V operational; compatible with 1.5V operation.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be maintained
at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference External reference ball for output drive calibration: This ball is tied to an external
240Ω resistor (RZQ), which is tied to VSSQ.
NC
–
No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).
NF
–
No function: When configured as a x4 device, these balls are NF. When configured as a
x8 device, these balls are defined as TDQS#, DQ[7:4].
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1Gb_DDR3L.pdf - Rev. K EN 9/14
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1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol
Type
Description
A[9:0], A10/AP,
A11, A12/BC#
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10
LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to
VREFCA. A12/BC#: when enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4).
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,
or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0,
MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW
provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle) or
active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input
buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down.
Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is
referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides
for external rank selection on systems with multiple ranks. CS# is considered part of
the command code. CS# is referenced to VREFCA.
LDM
Input
Input data mask: LDM is a lower byte, input mask signal for write data. Lower-byte
input data is masked when LDM is sampled HIGH along with the input data during a
write access. Although the LDM ball is input-only, the LDM loading is designed to
match that of the DQ and DQS balls. LDM is referenced to VREFDQ.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#,
UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/
TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4.
The ODT input is ignored if disabled via the LOAD MODE command. ODT is
referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC
LOW ≤ 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous.
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)
Symbol
Type
Description
UDM
Input
Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data
during a WRITE access. Although the UDM ball is input-only, the UDM loading is
designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ.
DQ[7:0]
I/O
Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8]
I/O
Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS#
I/O
Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data.
UDQS, UDQS#
I/O
Upper byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. DQS is center-aligned to write data.
VDD
Supply
Power supply: 1.35V, 1.283V to 1.45V.
VDDQ
Supply
DQ power supply: 1.35V, 1.283V to 1.45V.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference
NC
–
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ.
No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
21
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (JP)
0.8 ±0.1
Seating
plane
0.12 A
A
78X Ø0.45
Dimensions apply
to solder balls postreflow on Ø0.33
NSMD ball pads.
8 ±0.15
9
8
7
3
2
Ball A1 ID
1
Ball A1 ID
A
B
C
D
0.8 TYP
E
F
9.6
CTR
G
11.5 ±0.15
H
J
K
L
M
N
0.8
TYP
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1.2 MAX
6.4 CTR
0.25 MIN
1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
22
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Figure 9: 78-Ball FBGA – x4, x8 (DA)
0.155
Seating plane
A
0.12 A
1.8 CTR
Nonconductive
overmold
78X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
10.5 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.29 MIN
8 ±0.1
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Figure 10: 96-Ball FBGA – x16 (JT)
0.155
Seating plane
A
1.8 CTR
Nonconductive
overmold
96X Ø0.45
Dimensions apply
to solder balls postreflow on Ø0.35
SMD ball pads.
0.12 A
Ball A1 ID
9
8
7
3
2
Ball A1 ID
1
A
B
C
D
E
F
14 ±0.1
G
H
12 CTR
J
K
L
M
N
P
R
0.8 TYP
T
1.1 ±0.1
0.8 TYP
6.4 CTR
0.25 MIN
8 ±0.1
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Figure 11: 96-Ball FBGA – x16 (TW)
0.155
Seating plane
0.12 A
A
1.8 CTR
Nonconductive
overmold
96X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
14 ±0.1
12 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.29 MIN
8 ±0.1
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
25
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
Notes
1
VDD
VDD supply voltage relative to VSS
–0.4
1.975
V
VDDQ
VDD supply voltage relative to VSSQ
–0.4
1.975
V
VIN, VOUT
Voltage on any pin relative to VSS
–0.4
1.975
V
0
95
°C
2, 3
Operating case temperature – Industrial
–40
95
°C
2, 3
Storage temperature
–55
150
°C
TC
TSTG
Operating case temperature – Commercial
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 × VDDQ. When VDD and VDDQ are 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
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1Gb_DDR3L.pdf - Rev. K EN 9/14
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1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – IDD Specifications
Table 20: IDD Maximum Limits – Rev. J
Speed Bin
Parameter
Symbol
Operating current 0: One
bank ACTIVATE-to-PRECHARGE
IDD0
Operating current 1: One
bank ACTIVATE-to-READto-PRECHARGE
IDD1
Precharge power-down
current: Slow exit
Width
DDR3L
-1066
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
Units
Notes
x4,x8
32
33
34
36
mA
1, 2
x16
42
44
45
46
mA
1, 2
x4,x8
41
43
45
47
mA
1, 2
x16
56
59
61
63
mA
1, 2
IDD2P0 (slow)
All
12
12
12
12
mA
1, 2
Precharge power-down
current: Fast exit
IDD2P1 (fast)
All
12
12
12
12
mA
1, 2
Precharge quiet standby
IDD2Q
All
15
15
15
15
mA
1, 2
Precharge standby current IDD2N
All
17
17
17
17
mA
1, 2
x4, x8
21
24
25
27
mA
1, 2
x16
22
24
26
28
mA
1, 2
Precharge standby ODT
current
IDD2NT
Active power-down current
IDD3P
All
14
14
14
14
mA
1, 2
Active standby current
IDD3N
x4, x8
21
23
24
26
mA
1, 2
x16
23
25
26
28
mA
1, 2
IDD4R
x4, x8
60
72
83
95
mA
1, 2
x16
84
102
118
135
mA
1, 2
Burst write operating cur- IDD4W
rent
x4, x8
66
77
88
99
mA
1, 2
x16
98
116
132
149
mA
1, 2
Burst read operating current
Burst refresh current
IDD5B
All
155
155
160
165
mA
1, 2
Room temperature self
refresh
IDD6
All
12
12
12
12
mA
1, 2, 3
Extended temperature
self refresh
IDD6ET
All
14
14
14
14
mA
1, 4
x4, x8
117
144
149
162
mA
1, 2
x16
152
172
194
219
mA
1, 2
All
IDD2P0 +
2mA
IDD2P0 +
2mA
IDD2P0 +
2mA
IDD2P0 +
2mA
mA
1, 2
All banks interleaved read IDD7
current
Reset current
IDD8
Notes:
1.
2.
3.
4.
5.
TC = 85°C; SRT and ASR are disabled.
Enabling ASR could increase IDDx by up to an additional 2mA.
Restricted to TC (MAX) = 85°C.
TC = 85°C; ASR and ODT are disabled; SRT is enabled.
The IDD values must be derated (increased) on IT-option and AT-option devices when operated outside of the range 0°C ≤ TC ≤ +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6 and IDD7 must be derated by 7%.
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1Gb_DDR3L.pdf - Rev. K EN 9/14
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1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – IDD Specifications
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Electrical Specifications – DC and AC
DC Operating Conditions
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Unit
Notes
Supply voltage
VDD
1.283
1.35
1.45
V
1–7
I/O supply voltage
VDDQ
1.283
1.35
1.45
V
1–7
II
–2
–
2
μA
IVREF
–1
–
1
μA
Input leakage current
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
8, 9
1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 131)).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
9. VREF (see Table 22).
44
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© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Input Operating Conditions
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Unit
VIN low; DC/commands/address busses
VIL
VSS
N/A
See Table 23
V
VIN high; DC/commands/address busses
VIH
See Table 23
N/A
VDD
V
Notes
Input reference voltage command/address bus
VREFCA(DC)
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
1, 2
I/O reference voltage DQ bus
VREFDQ(DC)
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
2, 3
I/O reference voltage DQ bus in SELF REFRESH
VREFDQ(SR)
VSS
0.5 × VDD
VDD
V
4
VTT
–
0.5 × VDDQ
–
V
5
Command/address termination voltage
(system level, not direct DRAM input)
Notes:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFCA may not exceed
±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed
±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent.
45
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1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Table 23: DDR3L 1.35V Input Switching Conditions - Command and Address
Parameter/Condition
Symbol
DDR3L-800/1066
DDR3L-1333/1600
DDR3L-1866
Units
Command and Address
5
160
160
–
mV
VIH(AC135),min5
135
135
135
mV
–
–
125
mV
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
–
–
–125
mV
VIL(AC135),min
5
–135
–135
–135
mV
VIL(AC160),min
5
–160
–160
–
mV
Input high AC voltage: Logic 1
VIH(AC160),min
VIH(AC125,)min
Input high DC voltage: Logic 1
5
DQ and DM
Input high AC voltage: Logic 1
VIH(AC160),min5
160
160
–
mV
5
135
135
135
mV
5
–
–
130
mV
VIH(AC135),min
VIH(AC125),min
Input high DC voltage: Logic 1
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
Notes:
–
–
–130
mV
VIL(AC135),min
5
–135
–135
–135
mV
VIL(AC160),min
5
–160
–160
–
mV
1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
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1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition
Symbol
Min
Max
Units
Notes
Differential input logic high – slew
VIH,diff(AC)slew
180
N/A
mV
4
Differential input logic low – slew
VIL,diff(AC)slew
N/A
–180
mV
4
Differential input logic high
VIH,diff(AC)
2 × (VIH(AC) - VREF)
VDD/VDDQ
mV
5
Differential input logic low
VIL,diff(AC)
VSS/VSSQ
2 × (VIL(AC) - VREF)
mV
6
Differential input crossing voltage
relative to VDD/2 for DQS, DQS#;
CK, CK#
VIX
VREF(DC) - 150
VREF(DC) + 150
mV
5, 7, 9
Differential input crossing voltage
relative to VDD/2 for CK, CK#
VIX (175)
VREF(DC) - 175
VREF(DC) + 175
mV
5, 7–9
VDDQ/2 + 160
VDDQ
mV
5
VDD/2 + 160
VDD
mV
5
VSSQ
VDDQ/2 - 160
mV
6
VSS
VDD/2 - 160
mV
6
Single-ended high level for strobes
VSEH
Single-ended high level for CK,
CK#
Single-ended low level for strobes
Single-ended low level for CK, CK#
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
VSEL
Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
Differential input slew rate = 2 V/ns.
Defines slew rate reference points, relative to input crossing voltages.
Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable.
Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable.
The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
VIX must provide 25mV (single-ended) of the voltages separation.
47
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 13: DDR3L 1.35V Input Signal
VIL and VIH levels with ringback
VDDQ + 0.4V
Overshoot
VDD + 0.4V
Narrow pulse width
Minimum VIL and VIH levels
VIH MIN(AC)
VIH MIN(DC)
VIH(AC)
VIH(DC)
VIL MIN(AC)
VDDQ
VREF + 125/135/160mV
VIH(AC)
VREF + 90mV
VIH(DC)
VREF DC MAX + 1%
.51 x VDD
VREF = VDD/2
.49 x VDD
VREF DC MIN - 1% VDD
MAX 2% Total
VREF DC MAX
VREF
DC MIN
MAX 2% Total
VIL MIN(DC)
VDD
VIL(DC)
VREFDQ + AC noise
VREFDQ + DC error
VREFDQ - DC error
VREFDQ - AC noise
VREF - 90mV
VIL(DC)
VREF - 125/135/160mV
VIL(AC)
VIL(AC)
0.0V
VSS
VSS - 0.40V
Undershoot
VSS - 0.40V
Narrow pulse width
Note:
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
1. Numbers in diagrams reflect nominal values.
48
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
DDR3L 1.35V AC Overshoot/Undershoot Specification
Table 25: DDR3L Control and Address Pins
Parameter
DDR3L-800
DRR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
Maximum peak amplitude allowed
for overshoot area
(see Figure 14)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed
for undershoot area
(see Figure 15)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above VDD
(see Figure 14)
0.67 Vns
0.5 Vns
0.4 Vns
0.33 Vns
0.28 Vns
Maximum undershoot area below VSS
(see Figure 15)
0.67 Vns
0.5 Vns
0.4 Vns
0.33 Vns
0.28 Vns
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins
Parameter
DDR3L-800
DDR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
Maximum peak amplitude allowed
for overshoot area
(see Figure 14)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed
for undershoot area
(see Figure 15)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above
VDD/VDDQ (see Figure 14)
0.25 Vns
0.19 Vns
0.15 Vns
0.13 Vns
0.11 Vns
Maximum undershoot area below
VSS/VSSQ (see Figure 15)
0.25 Vns
0.19 Vns
0.15 Vns
0.13 Vns
0.11 Vns
Figure 14: Overshoot
Maximum amplitude
Overshoot area
Volts (V)
VDD/VDDQ
Time (ns)
Figure 15: Undershoot
VSS/VSSQ
Volts (V)
Undershoot area
Maximum amplitude
Time (ns)
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
49
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 16: VIX for Differential Signals
VDD, VDDQ
VDD, VDDQ
CK#, DQS#
CK#, DQS#
X
VIX
VIX
VDD/2, VDDQ/2
X
X
VDD/2, VDDQ/2
VIX
X
VIX
CK, DQS
CK, DQS
VSS, VSSQ
VSS, VSSQ
Figure 17: Single-Ended Requirements for Differential Signals
VDD or VDDQ
VSEH,min
VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max
VSEL
VSS or VSSQ
PDF: 09005aef833b7221
1Gb_DDR3L.pdf - Rev. K EN 9/14
50
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 18: Definition of Differential AC-Swing and tDVAC
tDVAC
VIH,diff(AC)min
VIH,diff,min
CK - CK#
DQS - DQS#
0.0
VIL,diff,max
VIL,diff(AC)max
tDVAC
Half cycle
Table 27: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback
DDR3L-800/1066/1333/1600
tDVAC
tDVAC
DDR3L-1866
tDVAC
tDVAC
tDVAC
Slew Rate (V/ns)
at
320mV (ps)
at
270mV (ps)
at
270mV (ps)
at
250mV (ps)
at
260mV (ps)
>4.0
189
201
163
168
176
4.0
189
201
163
168
176
3.0
162
179
140
147
154
2.0
109
134
95
105
111
1.8
91
119
80
91
97
1.6
69
100
62
74
78
1.4
40
76
37
52
55
1.2
Note1
44
5
22
24
1.0
Note1
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